weitron h t t p : w w w . w e i t r on. c o m . t w drain current 6.3 amperes drain source voltage 20 voltage featu r es: *super high dense cell design for low r ds(on) r ds(on) < 34m@v gs =4.5v *rugged and reliable *capable of 2.5v gate drive *simple drive requirement *sot-26 package maximum ratings (t a =25?c unless otherwise speci?ed) rating symbo l v alue unit drain-source voltage v ds 20 v gate-source voltage v gs 12 con t inuous drain current 3 , v gs @4.5v, ta=25?c 6.3 i d 5 pulsed drain current 1,2 i dm 30 a total power dissipation(t a =25?c) p d 2 w maximum junction-ambient r ja 62.5 ?c/w operating junction and storage temperature range tj,t stg -55~+150 ?c device marking WTL2602=2602 WTL2602 n-channel enhancement mode power mosfet 3 4 1,2,5,6 g a te source drain sot-26 08-sep-05 1/6 ta=70?c 1 2 3 4 5 6 lead(pb)- f r ee p b
WTL2602 weitron ht t p : w w w . w e i t r on.co m . t w 2/6 08-sep-05 electrical characteristics (t a = 2 5 u n less o t he r wise n o t ed) cha r a c t e r i st i c symbol m i n t yp m ax un i t s t atic drain-source breakdown voltage v gs =0,i d =250 a bv dss 20 - - - - gate-source threshold voltage v ds =v gs ,i d =250 a v gs(th) 0.5 v gate-source leakage current v gs =12v i gss i dss - - 100 na - - 1 drain-source leakage current(tj=25?c) v ds =20v,v gs =0 v ds =16v,v gs =0 drain-source leakage current(tj=55?c) - - 10 a drain-source on-resistance v gs =10v,i d =5.5a v gs =4.5v,i d =5.3a v gs =2.5v,i d =2.6a v gs =1.8v,i d =1.0a r ds(on) - - - - 30 34 - - - - 50 90 m forward transconductance v ds =5v,i d =5.3a g f s - 13 dynamic input capacitance v gs =0v,v ds =15v,f=1.0mhz v gs =0v,v ds =15v,f=1.0mhz v gs =0v,v ds =15v,f=1.0mhz c iss - 603 1085 output capacitance c oss - 144 - reverse transfer capacitance c rss - 111 - pf - s
WTL2602 note: 1. pulse width limited by max. junction temperature. 2. pulse width 300s, duty cycle 2%. 3. surface mounted on 1 in2 copper pad of fr4 board; 156?c/w when mounted on min. copper pad. 3/6 08-sep-05 weitron http:ww w .weit r on.com.tw switching turn-on delay time 2 v ds =15v, v gs =10v, i d =1a, r d =15 , r g =2 v ds =15v, v gs =10v, i d =1a, r d =15 , r g =2 v ds =15v, v gs =10v, i d =1a, r d =15 , r g =2 v ds =15v, v gs =10v, i d =1a, r d =15 , r g =2 v ds =10v,v gs =4.5v,i d =5.3a v ds =10v,v gs =4.5v,i d =5.3a v ds =10v,v gs =4.5v,i d =5.3a t d(on) t d(off) - 6 - rise time t r t f - 14 - turn-off delay time - 18.4 - fall time - 2.8 - ns total gate charge 2 q g q gs q gd - 8.7 16 g a te-source c h a r ge - 1.5 - g a te-source c h a nge - 3.6 - nc sou r ce-drain diode characteristics forward on voltage 2 v gs =0v,i s =1.2a v sd - - 1.2 v reverse recovery time t rr - 16.8 - ns reverse recovery charge q rr - 11 - nc v gs =0v,i s =5a,dl/dt=100a/ s v gs =0v,i s =5a,dl/dt=100a/ s
weitron http://ww w .weit r on.com.tw WTL2602 v ds ,drain- t o-source vo l t age(v) i d ) a ( t n e r r u c n i a r d , i d ) a ( t n e r r u c n i a r d , v ds ,drain-to-source v oltage(v) fig.1 t ypical output characteristics v gs ,gate-to-source v oltage(v) r ) n o ( s d ) ? m ( 100 80 60 40 20 1 2 3 4 5 6 7 8 9 10 11 fig.3 on-resistance v .s. gate v oltage r d e z i l a m r o n ) n o ( s d 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 fig.4 normalized onresistance fig.2 t ypical output characteristics i d = 1.0a t a = 25c v ds ,source-to-drain v oltage(v) i s ) a ( 10 1.0 0.1 0.01 0 0.4 0.8 1.2 1.6 fig.5 forward characteristics of reverse diode t j ,junction t emperature(c) t j ,junction t emperature(c) v ) h t ( s g ) v ( 1.6 1.2 1.4 0.6 0.8 1.0 0.2 0.4 -50 0 50 100 150 fig.6 gate th r eshold v oltage v .s. junction t emperatu r e i d = 5.3a v g = 4.5v t j = 25c t j = 150c 4/6 08-sep-05 5.0v 4.5v 4.0v v g =2.5v 80 60 40 20 0 0 1 2 3 4 5 6 7 t a =25 c 5.0v 4.5v 4.0v v g =2.5v 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 t a =150 c
weitron http://ww w .weit r on.com.tw WTL2602 q g , t otal gate cha r ge(nc) v s g , g a t e t o s o u r c e v o l t a g e ( v ) 12 14 10 8 6 4 2 0 0 5 10 15 20 25 fig 7. gate charge characteristics v ds = 16v i d = 5.3a v ds , drain-to-source v oltage(v) i d ) a ( 100 10 1 0.1 0.01 0.1 1 10 100 fig 9. maximum safe operation a r ea fig 1 1. switching t ime ci r cuit fig.12 gate charge w aveform t a = 25c single pulse v ds 90% 10% v gs t r t d(on) t d(o f f) t f 1ms 10ms 100ms is dc t, pulse w idth(s) r ( e s n o p s e r l a m r e h t d e z i l a m r o n a j ) 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 fig 10. effective t ransient thermal impedance duty factor = 0.5 v ds , drain-to-source v oltage(v) f p ( c ) 1000 100 0 1 5 9 13 17 21 25 29 fig 8. t ypical capacitance characteristics f = 1.0mhz 0.2 0.1 0.05 0.01 single pulse p dm duty factor = t / t peak tj=p dm x r ja + t u r ja =156c / w t t v g 4.5v q g q gs q gd cha r ge q 5/6 08-sep-05 crss coss ciss
weitron http://ww w .weit r on.com.tw WTL2602 dim a b c d e f f1 g h i k j l min max sot-26 sot-26 outline dimension 6/6 08-sep-05 unit:mm 0.00 1.20 ref 0.30 0.55 1.90 ref 2.60 0? 10? 0.12 ref 0.37 ref 0.60 ref 0.95 ref 3.00 2.70 3.10 1.40 1.80 0.10 0.08 0.25 l a g top view front view side view f d e b c h k i f1 j
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